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| PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX776 C B E REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -200 -200 -5 -2 -1 1 5.7 -55 to +200 UNIT V V V A A W mW/ C C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 50 20 30 20 MHz pF MIN. -200 -200 -5 -100 -100 -0.5 -0.5 -1.1 -1.0 MAX. UNIT V V V nA nA V V V V CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-100A, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-5V* IC=-10mA, VCE=-5V IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-270 |
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